lpcvdnitride

由 C Yang 著作 · 2018 · 被引用 66 次 — This paper analyzes and compares the characteristics of silicon nitride films deposited by low pressure chemical vapor deposition (LPCVD) ...

Low stress nitride is performed at a high ratio of DCS to NH3 flow rates (typically ~ 6). The consequence of such silicon-enriched deposition is a very low ...

The LPCVD Silicon Nitride furnace is a low pressure CVD furnace with a 40” flat zone capable of processing up to 6” diameter wafers. Process gases used are ...

LPCVD nitride can easily be deposited in a reproducible, very pure and uniform way. This leads to layers with good electric features, very good coverage of ...

LPCVD nitride can easily be deposited in a reproducible, very pure and uniform way. This leads to layers with good electric features, very good coverage of ...

Nitride Silicon Wafers Sizes up to 300mm ... Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal ...

Silicon nitride is a hard, dense material used for diffusion barriers, passivation layers, oxidation masks, etch masks, ion implant masks, insulation, ...

由 P Pan 著作 · 1985 · 被引用 71 次 — LPCVD silicon nitride films were deposited at 770~ with different NHJSiH.2C12 gas ratios ranging from 2 to 20. Auger analysis was used to determine the Si ...

由 H Jin 著作 · 2006 · 被引用 15 次 — Low-pressure chemical vapor deposition (LPCVD) of silicon nitride on thermally oxidized silicon wafers changes the fundamental.